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Ver especificaciones del producto para detalles del producto.
| Número de pieza | S3B M6G |
|---|---|
| Estado de la pieza | Not For New Designs |
| Tipo de diodo | Standard |
| Voltaje - DC Reverse (Vr) (Max) | 100V |
| Corriente - promedio rectificado (Io) | 3A |
| Voltaje - Adelante (Vf) (Máx) @ Si | 1.15V @ 3A |
| Velocidad | Standard Recovery >500ns, > 200mA (Io) |
| Tiempo de recuperación inversa (trr) | 1.5µs |
| Current - Reverse Leakage @ Vr | 5µA @ 100V |
| Capacitancia @ Vr, F | 30pF @ 4V, 1MHz |
| Tipo de montaje | Surface Mount |
| Paquete / caja | DO-214AB, SMC |
| Paquete de dispositivo del proveedor | DO-214AB (SMC) |
| Temperatura de funcionamiento - unión | -55°C ~ 150°C |
| Imagen | Número de pieza | Fabricantes | Descripción | En stock | Ver | |
|---|---|---|---|---|---|---|
 |
S3B | Fairchild/ON Semiconductor | DIODE GEN PURP 100V 3A SMC | - | 12000 | Detalles |
|
S3B M6G | Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 3A DO214AB | - | 667953 | Detalles |
|
S3B R7G | Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 3A DO214AB | - | 436506 | Detalles |
|
S3B V6G | Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 3A DO214AB | - | 582318 | Detalles |
|
S3B V7G | Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 3A DO214AB | - | 504675 | Detalles |
 |
S3B-13 | Diodes Incorporated | DIODE GEN PURP 100V 3A SMC | 0 | Detalles | |
 |
S3B-13-F | Diodes Incorporated | DIODE GEN PURP 100V 3A SMC | - | 9000 | Detalles |
 |
S3B-E3/57T | Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 3A DO214AB | - | 0 | Detalles |
 |
S3B-E3/9AT | Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 3A DO214AB | - | 0 | Detalles |
 |
S3B-EH | JST Sales America Inc. | CONN HEADER EH SIDE 3POS 2.5MM | 0 | Detalles | |
 |
S3B-EH(LF)(SN) | JST Sales America Inc. | CONN HEADER EH SIDE 3POS 2.5MM | 16809 | Detalles | |
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S3B-M3/57T | Vishay Semiconductor Diodes Division | DIODE GPP 3A 100V DO-214AB | - | 0 | Detalles |