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Ver especificaciones del producto para detalles del producto.
| Número de pieza | S1M M2G |
|---|---|
| Estado de la pieza | Active |
| Tipo de diodo | Standard |
| Voltaje - DC Reverse (Vr) (Max) | - |
| Corriente - promedio rectificado (Io) | 1A |
| Voltaje - Adelante (Vf) (Máx) @ Si | 1.1V @ 1A |
| Velocidad | Standard Recovery >500ns, > 200mA (Io) |
| Tiempo de recuperación inversa (trr) | 1.5µs |
| Current - Reverse Leakage @ Vr | 1µA @ 1000V |
| Capacitancia @ Vr, F | 12pF @ 4V, 1MHz |
| Tipo de montaje | Surface Mount |
| Paquete / caja | DO-214AC, SMA |
| Paquete de dispositivo del proveedor | DO-214AC (SMA) |
| Temperatura de funcionamiento - unión | -55°C ~ 175°C |
| Imagen | Número de pieza | Fabricantes | Descripción | En stock | Ver | |
|---|---|---|---|---|---|---|
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S1M M2G | Taiwan Semiconductor Corporation | DIODE GEN PURP 1000V 1A DO214AC | - | 1279335 | Detalles |
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S1M R3G | Taiwan Semiconductor Corporation | DIODE GEN PURP 1KV 1A DO214AC | - | 890965 | Detalles |
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S1M-13 | Diodes Incorporated | DIODE GEN PURP 1KV 1A SMA | 0 | Detalles | |
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S1M-13-F | Diodes Incorporated | DIODE GEN PURP 1KV 1A SMA | - | 505000 | Detalles |
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S1M-26R2 | Taiwan Semiconductor Corporation | GLASS PASSIVATED SMD RECTIFIER | - | 25803 | Detalles |
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S1M-26R2G | Taiwan Semiconductor Corporation | GLASS PASSIVATED SMD RECTIFIER | - | 25801 | Detalles |
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S1M-26R3 | Taiwan Semiconductor Corporation | GLASS PASSIVATED SMD RECTIFIER | - | 10543 | Detalles |
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S1M-26R3G | Taiwan Semiconductor Corporation | GLASS PASSIVATED SMD RECTIFIER | - | 25798 | Detalles |
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S1M-E3/5AT | Vishay Semiconductor Diodes Division | DIODE GEN PURP 1KV 1A DO214AC | - | 22500 | Detalles |
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S1M-E3/61T | Vishay Semiconductor Diodes Division | DIODE GEN PURP 1KV 1A DO214AC | - | 12600 | Detalles |
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S1M-F | SMC Diode Solutions | MODULAR | - | 25820 | Detalles |