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Ver especificaciones del producto para detalles del producto.
| Número de pieza | BAV199DW-TP |
|---|---|
| Estado de la pieza | Active |
| Configuración de Diodo | 2 Pair Series Connection |
| Tipo de diodo | Standard |
| Voltaje - DC Reverse (Vr) (Max) | 85V |
| Corriente - Rectificado promedio (Io) (por diodo) | 160mA (DC) |
| Voltaje - Adelante (Vf) (Máx) @ Si | 1.25V @ 150mA |
| Velocidad | Small Signal =< 200mA (Io), Any Speed |
| Tiempo de recuperación inversa (trr) | 3µs |
| Current - Reverse Leakage @ Vr | 5nA @ 75V |
| Temperatura de funcionamiento - unión | -65°C ~ 150°C |
| Tipo de montaje | Surface Mount |
| Paquete / caja | 6-TSSOP, SC-88, SOT-363 |
| Paquete de dispositivo del proveedor | SOT-363 |
| Imagen | Número de pieza | Fabricantes | Descripción | En stock | Ver | |
|---|---|---|---|---|---|---|
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BAV100-GS08 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 250MA SOD80 | - | 2500 | Detalles |
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BAV100-GS18 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 250MA SOD80 | - | 0 | Detalles |
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BAV101 L0G | Taiwan Semiconductor Corporation | DIODE GP 250V 200MA MINIMELF | - | 2421329 | Detalles |
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BAV101 L1G | Taiwan Semiconductor Corporation | DIODE GP 250V 200MA MINIMELF | - | 2656723 | Detalles |
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BAV101-GS08 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 250MA SOD80 | - | 0 | Detalles |
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BAV101-GS18 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 250MA SOD80 | - | 0 | Detalles |
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BAV102 | Fairchild/ON Semiconductor | DIODE GEN PURP 150V 200MA LL34 | - | 5000 | Detalles |
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BAV102,115 | Nexperia USA Inc. | DIODE GEN PURP 150V 250MA LLDS | 0 | Detalles | |
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BAV102,135 | Nexperia USA Inc. | DIODE GEN PURP 150V 250MA LLDS | 0 | Detalles | |
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BAV102-GS08 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 250MA SOD80 | - | 5000 | Detalles |
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BAV102-GS18 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 150V 250MA SOD80 | - | 0 | Detalles |
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BAV102-TP | Micro Commercial Co | DIODE GEN 150V 200MA MINI MELF | - | 0 | Detalles |