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| Número de pieza | GA100JT12-227 |
|---|---|
| Estado de la pieza | Active |
| Tipo de FET | - |
| Tecnología | SiC (Silicon Carbide Junction Transistor) |
| Drene a la fuente de voltaje (Vdss) | 1200V |
| Corriente - Drenaje continuo (Id) a 25 ° C | 160A |
| Voltaje de conducción (Rds máx. Encendidos, Rds mínimos activados) | - |
| Vgs (th) (Max) @ Id | - |
| Carga de puerta (Qg) (Max) @ Vgs | - |
| Capacitancia de entrada (Ciss) (Max) @ Vds | 14400pF @ 800V |
| Vgs (Max) | - |
| Característica FET | - |
| Disipación de potencia (Máx) | 535W (Tc) |
| Rds On (Max) @ Id, Vgs | 10 mOhm @ 100A |
| Temperatura de funcionamiento | -55°C ~ 175°C (TJ) |
| Tipo de montaje | Chassis Mount |
| Paquete de dispositivo del proveedor | SOT-227 |
| Paquete / caja | SOT-227-4, miniBLOC |
| Imagen | Número de pieza | Fabricantes | Descripción | En stock | Ver | |
|---|---|---|---|---|---|---|
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GA100-010WD | TE Connectivity Measurement Specialties | SENSOR PRESS DIFF 10" H2O 3SIP | 0 | Detalles | |
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GA100-015WD | TE Connectivity Measurement Specialties | SENSOR PRESS GAUGE 15" H2O 3SIP | 0 | Detalles | |
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GA100JT12-227 | GeneSiC Semiconductor | TRANS SJT 1200V 160A SOT227 | 80 | Detalles | |
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GA100JT17-227 | GeneSiC Semiconductor | TRANS SJT 1700V 160A SOT227 | 0 | Detalles | |
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GA100K6A1A | TE Connectivity Measurement Specialties | NTC THERMISTOR 100K OHM BEAD | - | 579 | Detalles |
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GA100K6A1B | TE Connectivity Measurement Specialties | NTC THERMISTOR 100K OHM BEAD | - | 671 | Detalles |
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GA100K6A1IA | TE Connectivity Measurement Specialties | NTC THERMISTOR 100K OHM BEAD | - | 3018 | Detalles |
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GA100K6MBD1 | TE Connectivity Measurement Specialties | NTC THERMISTOR 100K OHM BEAD | - | 99 | Detalles |
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GA100K6MCD1 | TE Connectivity Measurement Specialties | NTC THERMISTOR 100K OHM BEAD | - | 101 | Detalles |
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GA100SCPL12-227E | GeneSiC Semiconductor | SIC PHASE LEG BRIDGE 100A 1.2KV | - | 0 | Detalles |