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| Número de pieza | DF10M |
|---|---|
| Estado de la pieza | Active |
| Tipo de diodo | Single Phase |
| Tecnología | Standard |
| Voltaje - Pico Inverso (Máx) | 1000V |
| Corriente - promedio rectificado (Io) | 1.5A |
| Voltaje - Adelante (Vf) (Máx) @ Si | 1.1V @ 1A |
| Current - Reverse Leakage @ Vr | 5µA @ 1000V |
| Temperatura de funcionamiento | -55°C ~ 150°C (TJ) |
| Tipo de montaje | Through Hole |
| Paquete / caja | 4-EDIP (0.300", 7.62mm) |
| Paquete de dispositivo del proveedor | 4-DIP |
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|---|---|---|---|---|---|---|
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DF005S-E3/45 | Vishay Semiconductor Diodes Division | DIODE GPP 1A 50V 4SMD | - | 0 | Detalles |
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DF005S-E3/77 | Vishay Semiconductor Diodes Division | DIODE GPP 1A 50V 4SMD | - | 0 | Detalles |
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DF005S-G | Comchip Technology | RECT BRIDGE GPP 50V 1A DFS | 1983 | Detalles | |
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DF005S-T | Diodes Incorporated | RECT BRIDGE GPP 1A 50V DFS | - | 15000 | Detalles |
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DF005S/27 | Vishay Semiconductor Diodes Division | RECTIFIER BRIDGE 1A 50V 4SMD | - | 0 | Detalles |