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Ver especificaciones del producto para detalles del producto.
| Número de pieza | RS1DB-13-F |
|---|---|
| Estado de la pieza | Active |
| Tipo de diodo | Standard |
| Voltaje - DC Reverse (Vr) (Max) | 200V |
| Corriente - promedio rectificado (Io) | 1A |
| Voltaje - Adelante (Vf) (Máx) @ Si | 1.3V @ 1A |
| Velocidad | Fast Recovery =< 500ns, > 200mA (Io) |
| Tiempo de recuperación inversa (trr) | 150ns |
| Current - Reverse Leakage @ Vr | 5µA @ 200V |
| Capacitancia @ Vr, F | 15pF @ 4V, 1MHz |
| Tipo de montaje | Surface Mount |
| Paquete / caja | DO-214AA, SMB |
| Paquete de dispositivo del proveedor | SMB |
| Temperatura de funcionamiento - unión | -65°C ~ 150°C |
| Imagen | Número de pieza | Fabricantes | Descripción | En stock | Ver | |
|---|---|---|---|---|---|---|
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RS1D | Fairchild/ON Semiconductor | DIODE GEN PURP 200V 1A SMA | - | 90000 | Detalles |
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RS1D M2G | Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 1A DO214AC | - | 1186669 | Detalles |
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RS1D R3G | Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 1A DO214AC | - | 954495 | Detalles |
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RS1D-13 | Diodes Incorporated | DIODE GEN PURP 200V 1A SMA | 0 | Detalles | |
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RS1D-13-F | Diodes Incorporated | DIODE GEN PURP 200V 1A SMA | - | 15000 | Detalles |
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RS1D-E3/5AT | Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 1A DO214AC | - | 0 | Detalles |
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RS1D-E3/61T | Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 1A DO214AC | - | 1800 | Detalles |
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RS1D-M3/5AT | Vishay Semiconductor Diodes Division | DIODE SW 1A 200V DO-214AC | - | 0 | Detalles |
 |
RS1D-M3/61T | Vishay Semiconductor Diodes Division | DIODE SW 1A 200V DO-214AC | - | 0 | Detalles |
 |
RS1D/1 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 1A DO214AC | - | 0 | Detalles |
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RS1DB-13 | Diodes Incorporated | DIODE GEN PURP 200V 1A SMB | 0 | Detalles | |
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RS1DB-13-F | Diodes Incorporated | DIODE GEN PURP 200V 1A SMB | - | 36000 | Detalles |