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| Número de pieza | KBU3510-G |
|---|---|
| Estado de la pieza | Active |
| Tipo de diodo | Single Phase |
| Tecnología | Standard |
| Voltaje - Pico Inverso (Máx) | 1000V |
| Corriente - promedio rectificado (Io) | 35A |
| Voltaje - Adelante (Vf) (Máx) @ Si | 1.1V @ 17.5A |
| Current - Reverse Leakage @ Vr | 10µA @ 1000V |
| Temperatura de funcionamiento | -55°C ~ 150°C (TJ) |
| Tipo de montaje | Through Hole |
| Paquete / caja | 4-SIP, KBU |
| Paquete de dispositivo del proveedor | KBU |
| Imagen | Número de pieza | Fabricantes | Descripción | En stock | Ver | |
|---|---|---|---|---|---|---|
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KBU10005 | GeneSiC Semiconductor | DIODE BRIDGE 50V 10A KBU | 0 | Detalles | |
 |
KBU10005-G | Comchip Technology | RECT BRIDGE CELL 50V 10A KBU | 0 | Detalles | |
|
KBU1001 | GeneSiC Semiconductor | DIODE BRIDGE 100V 10A KBU | 0 | Detalles | |
|
KBU1001-G | Comchip Technology | RECTIFIER BRIDGE 10A 100V KBU | 0 | Detalles | |
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KBU1001G T0 | Taiwan Semiconductor Corporation | BRIDGE RECT 1PHASE 50V 10A KBU | - | 64240 | Detalles |
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KBU1001G T0G | Taiwan Semiconductor Corporation | BRIDGE RECT 1PHASE 50V 10A KBU | - | 13107 | Detalles |
|
KBU1002 | GeneSiC Semiconductor | DIODE BRIDGE 200V 10A KBU | 0 | Detalles | |
|
KBU1002-G | Comchip Technology | RECTIFIER BRIDGE 10A 200V KBU | 0 | Detalles | |
|
KBU1002G T0 | Taiwan Semiconductor Corporation | BRIDGE RECT 1PHASE 100V 10A KBU | - | 64240 | Detalles |
|
KBU1002G T0G | Taiwan Semiconductor Corporation | BRIDGE RECT 1PHASE 100V 10A KBU | - | 13107 | Detalles |
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KBU1003G T0 | Taiwan Semiconductor Corporation | BRIDGE RECT 1PHASE 200V 10A KBU | - | 64240 | Detalles |
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KBU1003G T0G | Taiwan Semiconductor Corporation | BRIDGE RECT 1PHASE 200V 10A KBU | - | 13104 | Detalles |