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| Número de pieza | GBL06-G |
|---|---|
| Estado de la pieza | Active |
| Tipo de diodo | Single Phase |
| Tecnología | Standard |
| Voltaje - Pico Inverso (Máx) | 600V |
| Corriente - promedio rectificado (Io) | 4A |
| Voltaje - Adelante (Vf) (Máx) @ Si | 1.1V @ 4A |
| Current - Reverse Leakage @ Vr | 5µA @ 600V |
| Temperatura de funcionamiento | -55°C ~ 150°C (TJ) |
| Tipo de montaje | Through Hole |
| Paquete / caja | 4-SIP, GBJ |
| Paquete de dispositivo del proveedor | GBJ |
| Imagen | Número de pieza | Fabricantes | Descripción | En stock | Ver | |
|---|---|---|---|---|---|---|
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GBL005 | GeneSiC Semiconductor | DIODE BRIDGE 50V 4A GBL | 861 | Detalles | |
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GBL005 D2G | Taiwan Semiconductor Corporation | BRIDGE RECT 1PHASE 50V 4A GBL | - | 234544 | Detalles |
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GBL005-E3/45 | Vishay Semiconductor Diodes Division | DIODE GPP 1PH 4A 50V GBL | - | 0 | Detalles |
 |
GBL005-E3/51 | Vishay Semiconductor Diodes Division | DIODE GPP 1PH 4A 50V GBL | - | 0 | Detalles |
|
GBL005HD2G | Taiwan Semiconductor Corporation | BRIDGE RECT 1PHASE 50V 4A GBL | - | 220268 | Detalles |
|
GBL01 | GeneSiC Semiconductor | DIODE BRIDGE 100V 4A GBL | 0 | Detalles | |
|
GBL01 D2G | Taiwan Semiconductor Corporation | BRIDGE RECT 1PHASE 100V 4A GBL | - | 234544 | Detalles |
 |
GBL01-E3/45 | Vishay Semiconductor Diodes Division | DIODE GPP 1PH 4A 100V GBL | - | 94 | Detalles |
 |
GBL01-E3/51 | Vishay Semiconductor Diodes Division | DIODE GPP 1PH 4A 100V GBL | - | 0 | Detalles |
|
GBL01-M3/45 | Vishay Semiconductor Diodes Division | BRIDGE RECT 4A GPP 100V GBL | - | 0 | Detalles |
|
GBL01-M3/51 | Vishay Semiconductor Diodes Division | BRIDGE RECT 4A GPP 100V GBL | - | 0 | Detalles |
 |
GBL01/1 | Vishay Semiconductor Diodes Division | RECTIFIER BRIDGE 4A 100V GBL | - | 0 | Detalles |