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| Número de pieza | CMHZ4627 |
|---|---|
| Estado de la pieza | Active |
| Voltaje - Zener (Nom) (Vz) | 6.2V |
| Tolerancia | ±5% |
| Potencia - Max | 500mW |
| Impedancia (Máx.) (Zzt) | 1200 Ohm |
| Current - Reverse Leakage @ Vr | 10µA @ 5V |
| Voltaje - Adelante (Vf) (Máx) @ Si | 1.5V @ 100mA |
| Temperatura de funcionamiento | -65°C ~ 150°C |
| Tipo de montaje | Surface Mount |
| Paquete / caja | SOD-123 |
| Paquete de dispositivo del proveedor | SOD-123 |
| Imagen | Número de pieza | Fabricantes | Descripción | En stock | Ver | |
|---|---|---|---|---|---|---|
 |
CMH | Excelsys Technologies Ltd | CONFIG DC PWR MOD DUAL 5V / 24V | - | 419 | Detalles |
 |
CMH01(TE12L,Q,M) | Toshiba Semiconductor and Storage | DIODE GEN PURP 200V 3A M-FLAT | - | 241600 | Detalles |
|
CMH02A(TE12L,Q,M) | Toshiba Semiconductor and Storage | DIODE GEN PURP 400V 3A M-FLAT | - | 219424 | Detalles |
|
CMH04(TE12L,Q,M) | Toshiba Semiconductor and Storage | DIODE GEN PURP 200V 1A MFLAT | - | 0 | Detalles |
|
CMH05(TE12L,Q,M) | Toshiba Semiconductor and Storage | DIODE GEN PURP 400V 1A M-FLAT | - | 289304 | Detalles |
 |
CMH05A(TE12L,Q,M) | Toshiba Semiconductor and Storage | DIODE GEN PURP 400V 1A MFLAT | 0 | Detalles | |
|
CMH07(TE12L,Q,M) | Toshiba Semiconductor and Storage | DIODE GEN PURP 200V 2A M-FLAT | - | 348282 | Detalles |
|
CMH08(TE12L,Q,M) | Toshiba Semiconductor and Storage | DIODE GEN PURP 400V 2A M-FLAT | - | 258072 | Detalles |
 |
CMH08A(TE12L,Q,M) | Toshiba Semiconductor and Storage | DIODE GEN PURP 400V 2A MFLAT | 0 | Detalles | |
 |
CMH322522-100KL | Bourns Inc. | FIXED IND 10UH 150MA 2.1 OHM SMD | 0 | Detalles | |
 |
CMH322522-101KL | Bourns Inc. | FIXED IND 100UH 40MA 10 OHM SMD | 0 | Detalles | |
 |
CMH322522-10NML | Bourns Inc. | FIXED IND 10NH 450MA 130 MOHM | 0 | Detalles |