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| Número de pieza | 1N967B BK |
|---|---|
| Estado de la pieza | Active |
| Voltaje - Zener (Nom) (Vz) | 18V |
| Tolerancia | ±5% |
| Potencia - Max | 500mW |
| Impedancia (Máx.) (Zzt) | 21 Ohm |
| Current - Reverse Leakage @ Vr | 5µA @ 13.7V |
| Voltaje - Adelante (Vf) (Máx) @ Si | 1.5V @ 200mA |
| Temperatura de funcionamiento | -65°C ~ 200°C (TJ) |
| Tipo de montaje | Through Hole |
| Paquete / caja | DO-204AH, DO-35, Axial |
| Paquete de dispositivo del proveedor | DO-35 |
| Imagen | Número de pieza | Fabricantes | Descripción | En stock | Ver | |
|---|---|---|---|---|---|---|
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1N914 | Microsemi Corporation | DIODE GEN PURP 75V 200MA DO35 | - | 599 | Detalles |
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1N914-TP | Micro Commercial Co | DIODE GEN PURP 100V 200MA DO35 | - | 0 | Detalles |
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1N914A | Fairchild/ON Semiconductor | DIODE GEN PURP 100V 200MA DO35 | - | 0 | Detalles |
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1N914ATR | Fairchild/ON Semiconductor | DIODE GEN PURP 100V 200MA DO35 | - | 20000 | Detalles |
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1N914A_T50R | Fairchild/ON Semiconductor | DIODE GEN PURP 100V 200MA DO35 | - | 0 | Detalles |
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1N914B | Fairchild/ON Semiconductor | DIODE GEN PURP 100V 200MA DO35 | - | 13981 | Detalles |
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1N914B A0G | Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 150MA DO35 | - | 4786349 | Detalles |
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1N914B,113 | NXP USA Inc. | DIODE GEN PURP 100V 200MA ALF2 | 0 | Detalles | |
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1N914B-TP | Micro Commercial Co | DIODE GEN PURP 100V 200MA DO35 | - | 0 | Detalles |
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1N914BTR | Fairchild/ON Semiconductor | DIODE GEN PURP 100V 200MA DO35 | - | 80000 | Detalles |
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1N914BTR_S00Z | ON Semiconductor | DIODE GEN PURP 100V 200MA DO35 | - | 10847 | Detalles |