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| Número de pieza | 1N4479 TR |
|---|---|
| Estado de la pieza | Active |
| Voltaje - Zener (Nom) (Vz) | 39V |
| Tolerancia | ±5% |
| Potencia - Max | 1.5W |
| Impedancia (Máx.) (Zzt) | 30 Ohm |
| Current - Reverse Leakage @ Vr | 50nA @ 31.2V |
| Voltaje - Adelante (Vf) (Máx) @ Si | - |
| Temperatura de funcionamiento | -65°C ~ 200°C (TJ) |
| Tipo de montaje | Through Hole |
| Paquete / caja | DO-204AL, DO-41, Axial |
| Paquete de dispositivo del proveedor | DO-41 |
| Imagen | Número de pieza | Fabricantes | Descripción | En stock | Ver | |
|---|---|---|---|---|---|---|
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1N4001 | Micro Commercial Co | DIODE GEN PURP 50V 1A DO41 | - | 0 | Detalles |
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1N4001 BK | Central Semiconductor Corp | DIODE GEN PURPOSE DO41 | - | 0 | Detalles |
|
1N4001 TR | Central Semiconductor Corp | DIODE GEN PURPOSE DO41 | - | 0 | Detalles |
 |
1N4001-B | Diodes Incorporated | DIODE GEN PURP 50V 1A DO41 | - | 0 | Detalles |
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1N4001-E3/53 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 1A DO204AL | - | 0 | Detalles |
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1N4001-E3/54 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 1A DO204AL | - | 16500 | Detalles |
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1N4001-E3/73 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 1A DO204AL | - | 0 | Detalles |
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1N4001-G | Comchip Technology | DIODE GEN PURP 50V 1A DO41 | 65000 | Detalles | |
|
1N4001-N-0-1-BP | Micro Commercial Co | DIODE GEN PURP 50V 1A DO41 | - | 0 | Detalles |
|
1N4001-N-0-2-BP | Micro Commercial Co | DIODE GEN PURP 50V 1A DO41 | - | 0 | Detalles |
|
1N4001-N-0-3-AP | Micro Commercial Co | DIODE GEN PURP 50V 1A DO41 | - | 0 | Detalles |
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1N4001-N-0-4-AP | Micro Commercial Co | DIODE GEN PURP 50V 1A DO41 | - | 0 | Detalles |