SQJ912AEP-T1_GE3

MOSFET 2N-CH 40V 30A PPAK SO-8
SQJ912AEP-T1_GE3 P1
SQJ912AEP-T1_GE3 P1
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Vishay Siliconix ~ SQJ912AEP-T1_GE3

Part Number
SQJ912AEP-T1_GE3
Manufacturer
Vishay Siliconix
Description
MOSFET 2N-CH 40V 30A PPAK SO-8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- SQJ912AEP-T1_GE3 PDF online browsing
Family
Transistors - FETs, MOSFETs - Arrays
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Product Parameter

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Part Number SQJ912AEP-T1_GE3
Part Status Active
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 30A
Rds On (Max) @ Id, Vgs 9.3 mOhm @ 9.7A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1835pF @ 20V
Power - Max 48W
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8 Dual
Supplier Device Package PowerPAK® SO-8 Dual

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