SQD50N04-5M6_GE3

MOSFET N-CH 40V 50A TO-252
SQD50N04-5M6_GE3 P1
SQD50N04-5M6_GE3 P1
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Vishay Siliconix ~ SQD50N04-5M6_GE3

Part Number
SQD50N04-5M6_GE3
Manufacturer
Vishay Siliconix
Description
MOSFET N-CH 40V 50A TO-252
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- SQD50N04-5M6_GE3 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number SQD50N04-5M6_GE3
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 85nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 4000pF @ 25V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 71W (Tc)
Rds On (Max) @ Id, Vgs 5.6 mOhm @ 20A, 10V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63

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