Images are for reference only.
See Product Specifications for product details.
| Part Number | IRF640LPBF |
|---|---|
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 70nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300pF @ 25V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 130W (Tc) |
| Rds On (Max) @ Id, Vgs | 180 mOhm @ 11A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-262-3 |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
 |
IRF60B217 | Infineon Technologies | MOSFET N-CH 60V 60A | 2918 | Details | |
 |
IRF60DM206 | Infineon Technologies | MOSFET N-CH 60V 130A | 0 | Details | |
 |
IRF60R217 | Infineon Technologies | MOSFET N-CH 60V 58A | 1911 | Details | |
 |
IRF610 | Vishay Siliconix | MOSFET N-CH 200V 3.3A TO-220AB | - | 0 | Details |
 |
IRF6100 | Infineon Technologies | MOSFET P-CH 20V 5.1A FLIP-FET | 0 | Details | |
|
IRF6100PBF | Infineon Technologies | MOSFET P-CH 20V 5.1A FLIPFET | 0 | Details | |
 |
IRF610L | Vishay Siliconix | MOSFET N-CH 200V 3.3A TO-262 | - | 0 | Details |
 |
IRF610LPBF | Vishay Siliconix | MOSFET N-CH 200V 3.3A TO-262 | - | 0 | Details |
 |
IRF610PBF | Vishay Siliconix | MOSFET N-CH 200V 3.3A TO-220AB | - | 0 | Details |
 |
IRF610S | Vishay Siliconix | MOSFET N-CH 200V 3.3A D2PAK | - | 0 | Details |
 |
IRF610SPBF | Vishay Siliconix | MOSFET N-CH 200V 3.3A D2PAK | - | 262 | Details |
 |
IRF610STRL | Vishay Siliconix | MOSFET N-CH 200V 3.3A D2PAK | - | 0 | Details |