Images are for reference only.
See Product Specifications for product details.
| Part Number | TK290A60Y,S4X |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 11.5A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 450µA |
| Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 730pF @ 300V |
| Vgs (Max) | ±30V |
| FET Feature | - |
| Power Dissipation (Max) | 35W (Tc) |
| Rds On (Max) @ Id, Vgs | 290 mOhm @ 5.8A, 10V |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220SIS |
| Package / Case | TO-220-3 Full Pack |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
 |
TK290A60Y,S4X | Toshiba Semiconductor and Storage | MOSFET TRANSISTOR TO-220SIS PD | - | 200 | Details |
 |
TK290A65Y,S4X | Toshiba Semiconductor and Storage | MOSFET TRANSISTOR TO-220SIS PD | - | 200 | Details |
 |
TK290P60Y,RQ | Toshiba Semiconductor and Storage | MOSFET TRANSISTOR DPAK(OS) PD | - | 4000 | Details |
 |
TK290P65Y,RQ | Toshiba Semiconductor and Storage | MOSFET TRANSISTOR DPAK(OS) PD | - | 4000 | Details |