TSM60NB041PW C1G

MOSFET N-CHANNEL 600V 78A TO247
TSM60NB041PW C1G P1
TSM60NB041PW C1G P1
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Taiwan Semiconductor Corporation ~ TSM60NB041PW C1G

Part Number
TSM60NB041PW C1G
Manufacturer
Taiwan Semiconductor Corporation
Description
MOSFET N-CHANNEL 600V 78A TO247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- TSM60NB041PW C1G PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 5367 pcs
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Product Parameter

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Part Number TSM60NB041PW C1G
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 78A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 41 mOhm @ 21.7A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 139nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 6120pF @ 100V
FET Feature -
Power Dissipation (Max) 446W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247
Package / Case TO-247-3

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