RS1E320GNTB

MOSFET N-CH 30V 32A 8-HSOP
RS1E320GNTB P1
RS1E320GNTB P1
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Rohm Semiconductor ~ RS1E320GNTB

Part Number
RS1E320GNTB
Manufacturer
Rohm Semiconductor
Description
MOSFET N-CH 30V 32A 8-HSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- RS1E320GNTB PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number RS1E320GNTB
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 32A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 4.5V, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 42.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2850pF @ 15V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 3W (Ta), 34.6W (Tc)
Rds On (Max) @ Id, Vgs 1.9 mOhm @ 32A, 10V
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-HSOP
Package / Case 8-PowerTDFN

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