Images are for reference only.
See Product Specifications for product details.
| Part Number | APT95GR65B2 |
|---|---|
| Part Status | Active |
| IGBT Type | NPT |
| Voltage - Collector Emitter Breakdown (Max) | 650V |
| Current - Collector (Ic) (Max) | 208A |
| Current - Collector Pulsed (Icm) | 400A |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 95A |
| Power - Max | 892W |
| Switching Energy | 3.12mJ (on), 2.55mJ (off) |
| Input Type | Standard |
| Gate Charge | 420nC |
| Td (on/off) @ 25°C | 29ns/226ns |
| Test Condition | 433V, 95A, 4.3 Ohm, 15V |
| Reverse Recovery Time (trr) | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | T-MAX™ [B2] |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
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APT90DR160HJ | Microsemi Corporation | DIODE MODULE 1.6V SOT227 | - | 0 | Details |
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APT94N60L2C3G | Microsemi Corporation | MOSFET N-CH 600V 94A TO264 | - | 17 | Details |
 |
APT94N65B2C3G | Microsemi Corporation | MOSFET N-CH 650V 94A TO-247 | - | 0 | Details |
 |
APT94N65B2C6 | Microsemi Corporation | MOSFET N-CH 650V 95A T-MAX | - | 358 | Details |
 |
APT95GR65B2 | Microsemi Corporation | IGBT 650V 208A 892W T-MAX | - | 60 | Details |
 |
APT95GR65JDU60 | Microsemi Corporation | INSULATED GATE BIPOLAR TRANSISTO | - | 0 | Details |
|
APT97N65LC6 | Microsemi Corporation | MOSFET N-CH 650V 97A TO-264 | - | 0 | Details |
 |
APT9F100B | Microsemi Corporation | MOSFET N-CH 1000V 9A TO-247 | - | 6 | Details |
 |
APT9F100S | Microsemi Corporation | MOSFET N-CH 1000V 9A D3PAK | - | 0 | Details |
 |
APT9M100B | Microsemi Corporation | MOSFET N-CH 1000V 9A TO-247 | - | 0 | Details |