IXTT10N100D

MOSFET N-CH 1000V 10A TO-268
IXTT10N100D P1
IXTT10N100D P2
IXTT10N100D P1
IXTT10N100D P2
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IXYS ~ IXTT10N100D

Part Number
IXTT10N100D
Manufacturer
IXYS
Description
MOSFET N-CH 1000V 10A TO-268
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- IXTT10N100D PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number IXTT10N100D
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000V
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 130nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2500pF @ 25V
Vgs (Max) ±30V
FET Feature Depletion Mode
Power Dissipation (Max) 400W (Tc)
Rds On (Max) @ Id, Vgs 1.4 Ohm @ 10A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-268
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

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