SPD18P06PGBTMA1

MOSFET P-CH 60V 18.6A TO252-3
SPD18P06PGBTMA1 P1
SPD18P06PGBTMA1 P1
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Infineon Technologies ~ SPD18P06PGBTMA1

Part Number
SPD18P06PGBTMA1
Manufacturer
Infineon Technologies
Description
MOSFET P-CH 60V 18.6A TO252-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- SPD18P06PGBTMA1 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 126564 pcs
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Product Parameter

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Part Number SPD18P06PGBTMA1
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 18.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 130 mOhm @ 13.2A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 33nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 860pF @ 25V
FET Feature -
Power Dissipation (Max) 80W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63

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