Images are for reference only.
See Product Specifications for product details.
| Part Number | IPD50P04P4L11ATMA1 |
|---|---|
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 85µA |
| Gate Charge (Qg) (Max) @ Vgs | 59nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 3900pF @ 25V |
| Vgs (Max) | ±16V |
| FET Feature | - |
| Power Dissipation (Max) | 58W (Tc) |
| Rds On (Max) @ Id, Vgs | 10.6 mOhm @ 50A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO252-3-313 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
 |
IPD50P03P4L11ATMA1 | Infineon Technologies | MOSFET P-CH 30V 50A TO252-3 | - | 0 | Details |
 |
IPD50P04P413ATMA1 | Infineon Technologies | MOSFET P-CH 40V 50A TO252-3 | 2500 | Details | |
 |
IPD50P04P4L11ATMA1 | Infineon Technologies | MOSFET P-CH 40V 50A TO252-3 | - | 15000 | Details |