Images are for reference only.
See Product Specifications for product details.
| Part Number | BAS116E6327HTSA1 |
|---|---|
| Part Status | Last Time Buy |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 80V |
| Current - Average Rectified (Io) | 250mA (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1.25V @ 150mA |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 1.5µs |
| Current - Reverse Leakage @ Vr | 5nA @ 75V |
| Capacitance @ Vr, F | 2pF @ 0V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | PG-SOT23-3 |
| Operating Temperature - Junction | 150°C (Max) |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
 |
BAS116 | Diodes Incorporated | DIODE GEN PURP 85V 215MA SOT23-3 | - | 0 | Details |
 |
BAS116 RFG | Taiwan Semiconductor Corporation | DIODE GEN PURP 75V 200MA SOT23 | - | 1546376 | Details |
 |
BAS116,215 | Nexperia USA Inc. | DIODE GEN PURP 75V 215MA SOT23 | 9000 | Details | |
 |
BAS116,235 | Nexperia USA Inc. | DIODE GEN PURP 75V 215MA SOT23 | 90000 | Details | |
 |
BAS116-7-F | Diodes Incorporated | DIODE GEN PURP 85V 215MA SOT23-3 | - | 0 | Details |
 |
BAS116E6327HTSA1 | Infineon Technologies | DIODE GEN PURP 80V 250MA SOT23-3 | - | 42000 | Details |
 |
BAS116E6433HTMA1 | Infineon Technologies | DIODE GEN PURP 80V 250MA SOT23-3 | - | 0 | Details |
|
BAS116GWJ | Nexperia USA Inc. | BAS116GW/SOD123/SOD2 | - | 10000 | Details |
|
BAS116GWX | Nexperia USA Inc. | BAS116GW/SOD123/SOD2 | - | 3000 | Details |
 |
BAS116H,115 | Nexperia USA Inc. | DIODE GEN PURP 75V 215MA SOD123F | 33000 | Details | |
|
BAS116HMFHT116 | Rohm Semiconductor | HIGH RELIABILITY AUTOMOTIVE SWIT | - | 1590825 | Details |
|
BAS116L2-TP | Micro Commercial Co | 215MA85VSWITCHINGDFN1006-2C P | - | 1206230 | Details |