HGTP10N120BN

IGBT 1200V 35A 298W TO220AB
HGTP10N120BN P1
HGTP10N120BN P1
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Fairchild/ON Semiconductor ~ HGTP10N120BN

Part Number
HGTP10N120BN
Manufacturer
Fairchild/ON Semiconductor
Description
IGBT 1200V 35A 298W TO220AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- HGTP10N120BN PDF online browsing
Family
Transistors - IGBTs - Single
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Product Parameter

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Part Number HGTP10N120BN
Part Status Not For New Designs
IGBT Type NPT
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 35A
Current - Collector Pulsed (Icm) 80A
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 10A
Power - Max 298W
Switching Energy 320µJ (on), 800µJ (off)
Input Type Standard
Gate Charge 100nC
Td (on/off) @ 25°C 23ns/165ns
Test Condition 960V, 10A, 10 Ohm, 15V
Reverse Recovery Time (trr) -
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220AB

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