FDD6N20TF

MOSFET N-CH 200V 4.5A D-PAK
FDD6N20TF P1
FDD6N20TF P2
FDD6N20TF P1
FDD6N20TF P2
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Fairchild/ON Semiconductor ~ FDD6N20TF

Part Number
FDD6N20TF
Manufacturer
Fairchild/ON Semiconductor
Description
MOSFET N-CH 200V 4.5A D-PAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
FDD6N20TF.pdf FDD6N20TF PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number FDD6N20TF
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 4.5A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 230pF @ 25V
Vgs (Max) ±30V
FET Feature -
Power Dissipation (Max) 40W (Tc)
Rds On (Max) @ Id, Vgs 800 mOhm @ 2.3A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63

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