Images are for reference only.
See Product Specifications for product details.
| Part Number | EPC2107ENGRT |
|---|---|
| Part Status | Active |
| FET Type | 3 N-Channel (Half Bridge + Synchronous Bootstrap) |
| FET Feature | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 1.7A, 500mA |
| Rds On (Max) @ Id, Vgs | 320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V |
| Vgs(th) (Max) @ Id | 2.5V @ 100µA, 2.5V @ 20µA |
| Gate Charge (Qg) (Max) @ Vgs | 0.16nC @ 5V, 0.044nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 16pF @ 50V, 7pF @ 50V |
| Power - Max | - |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 9-VFBGA |
| Supplier Device Package | 9-BGA (1.35x1.35) |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
 |
EPC2001 | EPC | TRANS GAN 100V 25A BUMPED DIE | 26500 | Details | |
 |
EPC2001C | EPC | TRANS GAN 100V 36A BUMPED DIE | 70000 | Details | |
 |
EPC2007 | EPC | TRANS GAN 100V 6A BUMPED DIE | 0 | Details | |
 |
EPC2007C | EPC | TRANS GAN 100V 6A BUMPED DIE | 15000 | Details | |
 |
EPC2010 | EPC | TRANS GAN 200V 12A BUMPED DIE | 5000 | Details | |
 |
EPC2010C | EPC | TRANS GAN 200V 22A BUMPED DIE | 12000 | Details | |
 |
EPC2010CENGR | EPC | TRANS GAN 200V 22A BUMPED DIE | 0 | Details | |
 |
EPC2012 | EPC | TRANS GAN 200V 3A BUMPED DIE | 4000 | Details | |
 |
EPC2012C | EPC | TRANS GAN 200V 5A BUMPED DIE | 21000 | Details | |
 |
EPC2012CENGR | EPC | TRANS GAN 200V 5A BUMPED DIE | 0 | Details | |
 |
EPC2014 | EPC | TRANS GAN 40V 10A BUMPED DIE | 26000 | Details | |
 |
EPC2014C | EPC | TRANS GAN 40V 10A BUMPED DIE | 97500 | Details |