SI1013R-T1-GE3

MOSFET P-CH 20V 350MA SC-75A
SI1013R-T1-GE3 P1
SI1013R-T1-GE3 P1
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Vishay Siliconix ~ SI1013R-T1-GE3

Part Number
SI1013R-T1-GE3
Manufacturer
Vishay Siliconix
Description
MOSFET P-CH 20V 350MA SC-75A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- SI1013R-T1-GE3 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 15000 pcs
  • Reference Price : submit a request

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Product Parameter

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Part Number SI1013R-T1-GE3
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 350mA (Ta)
Drive Voltage (Max Rds On,Min Rds On) 1.8V, 4.5V
Vgs(th) (Max) @ Id 450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs 1.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds -
Vgs (Max) ±6V
FET Feature -
Power Dissipation (Max) 150mW (Ta)
Rds On (Max) @ Id, Vgs 1.2 Ohm @ 350mA, 4.5V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SC-75A
Package / Case SC-75A

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