TPS1100DR

MOSFET P-CH 15V 1.6A 8-SOIC
TPS1100DR P1
TPS1100DR P1
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Texas Instruments ~ TPS1100DR

Part Number
TPS1100DR
Manufacturer
Texas Instruments
Description
MOSFET P-CH 15V 1.6A 8-SOIC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- TPS1100DR PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 10000 pcs
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Product Parameter

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Part Number TPS1100DR
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 15V
Current - Continuous Drain (Id) @ 25°C 1.6A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 2.7V, 10V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5.45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds -
Vgs (Max) +2V, -15V
FET Feature -
Power Dissipation (Max) 791mW (Ta)
Rds On (Max) @ Id, Vgs 180 mOhm @ 1.5A, 10V
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width)

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