SCT30N120

MOSFET N-CH 1200V 45A HIP247
SCT30N120 P1
SCT30N120 P1
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STMicroelectronics ~ SCT30N120

Part Number
SCT30N120
Manufacturer
STMicroelectronics
Description
MOSFET N-CH 1200V 45A HIP247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- SCT30N120 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number SCT30N120
Part Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200V
Current - Continuous Drain (Id) @ 25°C 40A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 20V
Vgs(th) (Max) @ Id 2.6V @ 1mA (Typ)
Gate Charge (Qg) (Max) @ Vgs 105nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds 1700pF @ 400V
Vgs (Max) +25V, -10V
FET Feature -
Power Dissipation (Max) 270W (Tc)
Rds On (Max) @ Id, Vgs 100 mOhm @ 20A, 20V
Operating Temperature -55°C ~ 200°C (TJ)
Mounting Type Through Hole
Supplier Device Package HiP247™
Package / Case TO-247-3

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