IRF630

MOSFET N-CH 200V 9A TO-220
IRF630 P1
IRF630 P1
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STMicroelectronics ~ IRF630

Part Number
IRF630
Manufacturer
STMicroelectronics
Description
MOSFET N-CH 200V 9A TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- IRF630 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 10202 pcs
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Product Parameter

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Part Number IRF630
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 700pF @ 25V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 75W (Tc)
Rds On (Max) @ Id, Vgs 400 mOhm @ 4.5A, 10V
Operating Temperature -65°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3

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