IRF60R217

MOSFET N-CH 60V 58A
IRF60R217 P1
IRF60R217 P1
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Infineon Technologies ~ IRF60R217

Part Number
IRF60R217
Manufacturer
Infineon Technologies
Description
MOSFET N-CH 60V 58A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
IRF60R217.pdf IRF60R217 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 1911 pcs
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Product Parameter

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Part Number IRF60R217
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 58A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 6V, 10V
Vgs(th) (Max) @ Id 3.7V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 66nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2170pF @ 25V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 83W (Tc)
Rds On (Max) @ Id, Vgs 9.9 mOhm @ 35A, 10V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63

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