IPD30N06S2-15

MOSFET N-CH 55V 30A TO252-3
IPD30N06S2-15 P1
IPD30N06S2-15 P1
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Infineon Technologies ~ IPD30N06S2-15

Part Number
IPD30N06S2-15
Manufacturer
Infineon Technologies
Description
MOSFET N-CH 55V 30A TO252-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- IPD30N06S2-15 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number IPD30N06S2-15
Part Status Discontinued at Digi-Key
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 80µA
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1485pF @ 25V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 136W (Tc)
Rds On (Max) @ Id, Vgs 14.7 mOhm @ 30A, 10V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63

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