GP1M009A020CG

MOSFET N-CH 200V 9A DPAK
GP1M009A020CG P1
GP1M009A020CG P2
GP1M009A020CG P1
GP1M009A020CG P2
Images are for reference only.
See Product Specifications for product details.

Global Power Technologies Group ~ GP1M009A020CG

Part Number
GP1M009A020CG
Manufacturer
Global Power Technologies Group
Description
MOSFET N-CH 200V 9A DPAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
GP1M009A020CG.pdf GP1M009A020CG PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 0 pcs
  • Reference Price : submit a request

Submit a Request For Quotation on quantities greater than those displayed.

Product Parameter

All Products

Part Number GP1M009A020CG
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 414pF @ 25V
Vgs (Max) ±30V
FET Feature -
Power Dissipation (Max) 52W (Tc)
Rds On (Max) @ Id, Vgs 400 mOhm @ 4.5A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63

Related Products

All Products