FQB1N60TM

MOSFET N-CH 600V 1.2A D2PAK
FQB1N60TM P1
FQB1N60TM P1
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Fairchild/ON Semiconductor ~ FQB1N60TM

Part Number
FQB1N60TM
Manufacturer
Fairchild/ON Semiconductor
Description
MOSFET N-CH 600V 1.2A D2PAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
FQB1N60TM.pdf FQB1N60TM PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number FQB1N60TM
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 1.2A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 150pF @ 25V
Vgs (Max) ±30V
FET Feature -
Power Dissipation (Max) 3.13W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs 11.5 Ohm @ 600mA, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263AB)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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