FDP036N10A

MOSFET N-CH 100V TO-220AB-3
FDP036N10A P1
FDP036N10A P2
FDP036N10A P1
FDP036N10A P2
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Fairchild/ON Semiconductor ~ FDP036N10A

Part Number
FDP036N10A
Manufacturer
Fairchild/ON Semiconductor
Description
MOSFET N-CH 100V TO-220AB-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- FDP036N10A PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 112 pcs
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Product Parameter

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Part Number FDP036N10A
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 116nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 7295pF @ 25V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 333W (Tc)
Rds On (Max) @ Id, Vgs 3.6 mOhm @ 75A, 10V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3

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