ZXM66P02N8TC

MOSFET P-CH 20V 6.4A 8SOIC
ZXM66P02N8TC P1
ZXM66P02N8TC P1
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Diodes Incorporated ~ ZXM66P02N8TC

Part Number
ZXM66P02N8TC
Manufacturer
Diodes Incorporated
Description
MOSFET P-CH 20V 6.4A 8SOIC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- ZXM66P02N8TC PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number ZXM66P02N8TC
Part Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 6.4A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 2.5V, 4.5V
Vgs(th) (Max) @ Id 700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 43.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 2068pF @ 15V
Vgs (Max) ±12V
FET Feature -
Power Dissipation (Max) 1.56W (Ta)
Rds On (Max) @ Id, Vgs 25 mOhm @ 3.2A, 4.5V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width)

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