VS-GB75LP120N

IGBT 1200V 170A 658W INT-A-PAK
VS-GB75LP120N P1
VS-GB75LP120N P1
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Vishay Semiconductor Diodes Division ~ VS-GB75LP120N

Part Number
VS-GB75LP120N
Manufacturer
Vishay Semiconductor Diodes Division
Description
IGBT 1200V 170A 658W INT-A-PAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
VS-GB75LP120N.pdf VS-GB75LP120N PDF online browsing
Family
Transistors - IGBTs - Modules
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Product Parameter

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Part Number VS-GB75LP120N
Part Status Obsolete
IGBT Type -
Configuration Single
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 170A
Power - Max 658W
Vce(on) (Max) @ Vge, Ic 1.82V @ 15V, 75A (Typ)
Current - Collector Cutoff (Max) 1mA
Input Capacitance (Cies) @ Vce 5.52nF @ 25V
Input Standard
NTC Thermistor No
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Chassis Mount
Package / Case INT-A-PAK (3 + 4)
Supplier Device Package INT-A-PAK

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