SISA26DN-T1-GE3

MOSFET N-CH 25V 60A POWERPAK1212
SISA26DN-T1-GE3 P1
SISA26DN-T1-GE3 P1
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Vishay Siliconix ~ SISA26DN-T1-GE3

Part Number
SISA26DN-T1-GE3
Manufacturer
Vishay Siliconix
Description
MOSFET N-CH 25V 60A POWERPAK1212
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- SISA26DN-T1-GE3 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 194771 pcs
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Product Parameter

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Part Number SISA26DN-T1-GE3
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.65 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 44nC @ 10V
Vgs (Max) +16V, -12V
Input Capacitance (Ciss) (Max) @ Vds 2247pF @ 10V
FET Feature -
Power Dissipation (Max) 39W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8S (3.3x3.3)
Package / Case PowerPAK® 1212-8S

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