SI8819EDB-T2-E1

MOSFET P-CH 12V 2.9A 4-MICROFOOT
SI8819EDB-T2-E1 P1
SI8819EDB-T2-E1 P1
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Vishay Siliconix ~ SI8819EDB-T2-E1

Part Number
SI8819EDB-T2-E1
Manufacturer
Vishay Siliconix
Description
MOSFET P-CH 12V 2.9A 4-MICROFOOT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- SI8819EDB-T2-E1 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 510346 pcs
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Product Parameter

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Part Number SI8819EDB-T2-E1
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain (Id) @ 25°C 2.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 3.7V
Rds On (Max) @ Id, Vgs 80 mOhm @ 1.5A, 3.7V
Vgs(th) (Max) @ Id 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17nC @ 8V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 650pF @ 6V
FET Feature -
Power Dissipation (Max) 900mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 4-MICRO FOOT® (0.8x0.8)
Package / Case 4-XFBGA

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