SI8410DB-T2-E1

MOSFET N-CH 20V MICROFOOT
SI8410DB-T2-E1 P1
SI8410DB-T2-E1 P1
Images are for reference only.
See Product Specifications for product details.

Vishay Siliconix ~ SI8410DB-T2-E1

Part Number
SI8410DB-T2-E1
Manufacturer
Vishay Siliconix
Description
MOSFET N-CH 20V MICROFOOT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- SI8410DB-T2-E1 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 3000 pcs
  • Reference Price : submit a request

Submit a Request For Quotation on quantities greater than those displayed.

Product Parameter

All Products

Part Number SI8410DB-T2-E1
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C -
Drive Voltage (Max Rds On,Min Rds On) 1.5V, 4.5V
Vgs(th) (Max) @ Id 850mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds 620pF @ 10V
Vgs (Max) ±8V
FET Feature -
Power Dissipation (Max) 780mW (Ta), 1.8W (Tc)
Rds On (Max) @ Id, Vgs 37 mOhm @ 1.5A, 4.5V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 4-Micro Foot (1x1)
Package / Case 4-UFBGA

Related Products

All Products