SI4823DY-T1-E3

MOSFET P-CH 20V 4.1A 8-SOIC
SI4823DY-T1-E3 P1
SI4823DY-T1-E3 P1
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Vishay Siliconix ~ SI4823DY-T1-E3

Part Number
SI4823DY-T1-E3
Manufacturer
Vishay Siliconix
Description
MOSFET P-CH 20V 4.1A 8-SOIC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- SI4823DY-T1-E3 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number SI4823DY-T1-E3
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 4.1A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 2.5V, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 660pF @ 10V
Vgs (Max) ±12V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 1.7W (Ta), 2.8W (Tc)
Rds On (Max) @ Id, Vgs 108 mOhm @ 3.3A, 4.5V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width)

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