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See Product Specifications for product details.
| Part Number | SI4812BDY-T1-E3 |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 7.3A (Ta) |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 13nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 1.4W (Ta) |
| Rds On (Max) @ Id, Vgs | 16 mOhm @ 9.5A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SO |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
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SI4812BDY-T1-E3 | Vishay Siliconix | MOSFET N-CH 30V 7.3A 8-SOIC | - | 0 | Details |
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SI4812BDY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 7.3A 8-SOIC | - | 0 | Details |
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SI4814BDY-T1-E3 | Vishay Siliconix | MOSFET 2N-CH 30V 10A 8SOIC | - | 0 | Details |
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SI4814BDY-T1-GE3 | Vishay Siliconix | MOSFET 2N-CH 30V 10A 8SOIC | - | 0 | Details |
 |
SI4816BDY-T1-E3 | Vishay Siliconix | MOSFET 2N-CH 30V 5.8A 8-SOIC | - | 2500 | Details |
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SI4816BDY-T1-GE3 | Vishay Siliconix | MOSFET 2N-CH 30V 5.8A 8-SOIC | - | 0 | Details |
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SI4816DY-T1-E3 | Vishay Siliconix | MOSFET 2N-CH 30V 5.3A 8-SOIC | - | 0 | Details |
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SI4816DY-T1-GE3 | Vishay Siliconix | MOSFET 2N-CH 30V 5.3A 8-SOIC | - | 0 | Details |
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SI4818DY-T1-E3 | Vishay Siliconix | MOSFET 2N-CH 30V 5.3A 8-SOIC | - | 0 | Details |
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SI4818DY-T1-GE3 | Vishay Siliconix | MOSFET 2N-CH 30V 5.3A 8-SOIC | - | 0 | Details |