SI4804BDY-T1-E3

MOSFET 2N-CH 30V 5.7A 8-SOIC
SI4804BDY-T1-E3 P1
SI4804BDY-T1-E3 P1
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Vishay Siliconix ~ SI4804BDY-T1-E3

Part Number
SI4804BDY-T1-E3
Manufacturer
Vishay Siliconix
Description
MOSFET 2N-CH 30V 5.7A 8-SOIC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- SI4804BDY-T1-E3 PDF online browsing
Family
Transistors - FETs, MOSFETs - Arrays
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Product Parameter

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Part Number SI4804BDY-T1-E3
Part Status Obsolete
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 5.7A
Rds On (Max) @ Id, Vgs 22 mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max 1.1W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SO

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