Images are for reference only.
See Product Specifications for product details.
| Part Number | SI4800BDY-T1-GE3 |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 6.5A (Ta) |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 1.8V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 13nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Vgs (Max) | ±25V |
| FET Feature | - |
| Power Dissipation (Max) | 1.3W (Ta) |
| Rds On (Max) @ Id, Vgs | 18.5 mOhm @ 9A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SO |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
 |
SI4800,518 | NXP USA Inc. | MOSFET N-CH 30V 9A SOT96-1 | - | 0 | Details |
 |
SI4800BDY-T1-E3 | Vishay Siliconix | MOSFET N-CH 30V 6.5A 8-SOIC | - | 0 | Details |
 |
SI4800BDY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 6.5A 8-SOIC | - | 0 | Details |