SI2342DS-T1-GE3

MOSFET N-CH 8V 6A SOT-23
SI2342DS-T1-GE3 P1
SI2342DS-T1-GE3 P1
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Vishay Siliconix ~ SI2342DS-T1-GE3

Part Number
SI2342DS-T1-GE3
Manufacturer
Vishay Siliconix
Description
MOSFET N-CH 8V 6A SOT-23
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- SI2342DS-T1-GE3 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 9000 pcs
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Product Parameter

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Part Number SI2342DS-T1-GE3
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 8V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 1.2V, 4.5V
Vgs(th) (Max) @ Id 800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 1070pF @ 4V
Vgs (Max) ±5V
FET Feature -
Power Dissipation (Max) 1.3W (Ta), 2.5W (Tc)
Rds On (Max) @ Id, Vgs 17 mOhm @ 7.2A, 4.5V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23
Package / Case TO-236-3, SC-59, SOT-23-3

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