BAS316,H3F

DIODE GEN PURP 100V 250MA USC
BAS316,H3F P1
BAS316,H3F P1
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Toshiba Semiconductor and Storage ~ BAS316,H3F

Part Number
BAS316,H3F
Manufacturer
Toshiba Semiconductor and Storage
Description
DIODE GEN PURP 100V 250MA USC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- BAS316,H3F PDF online browsing
Family
Diodes - Rectifiers - Single
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Product Parameter

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Part Number BAS316,H3F
Part Status Active
Diode Type Standard
Voltage - DC Reverse (Vr) (Max) 100V
Current - Average Rectified (Io) 250mA
Voltage - Forward (Vf) (Max) @ If 1.25V @ 150mA
Speed Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 3ns
Current - Reverse Leakage @ Vr 200nA @ 80V
Capacitance @ Vr, F 0.35pF @ 0V, 1MHz
Mounting Type Surface Mount
Package / Case SC-76, SOD-323
Supplier Device Package USC
Operating Temperature - Junction 150°C (Max)

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