STL10N65M2

MOSFET N-CH 650V POWERFLAT 5X6 H
STL10N65M2 P1
STL10N65M2 P1
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STMicroelectronics ~ STL10N65M2

Part Number
STL10N65M2
Manufacturer
STMicroelectronics
Description
MOSFET N-CH 650V POWERFLAT 5X6 H
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- STL10N65M2 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number STL10N65M2
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 4.5A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 315pF @ 100V
Vgs (Max) ±25V
FET Feature -
Power Dissipation (Max) 48W (Tc)
Rds On (Max) @ Id, Vgs 1 Ohm @ 2.5A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerFlat™ (5x6)
Package / Case 8-PowerSMD, Flat Leads

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