NSBC123JPDP6T5G

TRANS 2NPN PREBIAS 0.339W SOT963
NSBC123JPDP6T5G P1
NSBC123JPDP6T5G P1
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ON Semiconductor ~ NSBC123JPDP6T5G

Part Number
NSBC123JPDP6T5G
Manufacturer
ON Semiconductor
Description
TRANS 2NPN PREBIAS 0.339W SOT963
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- NSBC123JPDP6T5G PDF online browsing
Family
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
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Product Parameter

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Part Number NSBC123JPDP6T5G
Part Status Active
Transistor Type 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) (Ohms) 2.2k
Resistor - Emitter Base (R2) (Ohms) 47k
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition -
Power - Max 339mW
Mounting Type Surface Mount
Package / Case SOT-963
Supplier Device Package SOT-963

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