MRF5812R2

RF TRANS NPN 18V 200MA 8SOIC
MRF5812R2 P1
MRF5812R2 P1
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Microsemi Corporation ~ MRF5812R2

Part Number
MRF5812R2
Manufacturer
Microsemi Corporation
Description
RF TRANS NPN 18V 200MA 8SOIC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- MRF5812R2 PDF online browsing
Family
Transistors - Bipolar (BJT) - RF
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Product Parameter

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Part Number MRF5812R2
Part Status Active
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 18V
Frequency - Transition 5GHz
Noise Figure (dB Typ @ f) 2dB @ 500MHz
Gain 15.5dB
Power - Max 1.25W
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 50mA, 5V
Current - Collector (Ic) (Max) 200mA
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SO

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