APTM120H57FT3G

MOSFET 4N-CH 1200V 17A SP3
APTM120H57FT3G P1
APTM120H57FT3G P1
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Microsemi Corporation ~ APTM120H57FT3G

Part Number
APTM120H57FT3G
Manufacturer
Microsemi Corporation
Description
MOSFET 4N-CH 1200V 17A SP3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
APTM120H57FT3G.pdf APTM120H57FT3G PDF online browsing
Family
Transistors - FETs, MOSFETs - Arrays
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Product Parameter

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Part Number APTM120H57FT3G
Part Status Obsolete
FET Type 4 N-Channel (H-Bridge)
FET Feature Standard
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C 17A
Rds On (Max) @ Id, Vgs 684 mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs 187nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 5155pF @ 25V
Power - Max 390W
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Chassis Mount
Package / Case SP3
Supplier Device Package SP3

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