APTC90H12T1G

MOSFET 4N-CH 900V 30A SP1
APTC90H12T1G P1
APTC90H12T1G P1
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Microsemi Corporation ~ APTC90H12T1G

Part Number
APTC90H12T1G
Manufacturer
Microsemi Corporation
Description
MOSFET 4N-CH 900V 30A SP1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- APTC90H12T1G PDF online browsing
Family
Transistors - FETs, MOSFETs - Arrays
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Product Parameter

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Part Number APTC90H12T1G
Part Status Active
FET Type 4 N-Channel (H-Bridge)
FET Feature Super Junction
Drain to Source Voltage (Vdss) 900V
Current - Continuous Drain (Id) @ 25°C 30A
Rds On (Max) @ Id, Vgs 120 mOhm @ 26A, 10V
Vgs(th) (Max) @ Id 3.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs 270nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 6800pF @ 100V
Power - Max 250W
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Chassis Mount
Package / Case SP1
Supplier Device Package SP1

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